Job Description


Job Description

The Senior Staff MOCVD Development Engineer will lead process and hardware development for GaN-based epitaxial growth on silicon and sapphire substrates, enabling next-generation power devices. This role emphasizes deep technical understanding of MOCVD reactor behavior, GaN heterostructure engineering, and epitaxial integration for p-GaN and e-mode (enhancement-mode) device architectures. The ideal candidate combines strong experimental rigor, demonstrated materials expertise, and cross-functional leadership to translate research concepts into production-capable processes.

Responsibilities: 

  • Develop, optimize, and transfer MOCVD epitaxial processes for GaN-on-Si and GaN-onSapphire wafers, focusing on high-performance device layers targeting e-mode (p-GaN gate) and HEMT applications.
  • Design and execute development roadmaps for buffer structure engineering, strain management, and defect reduction to achieve target breakdown voltages...

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